9 amps 200volts n-channel mosfet description the ET630 n-channel enhancement mode silicon gate power mosfet is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers . features * rds(on) = 0.4 ? @vgs = 10 v * ultra low gate charge ( typical 19 nc ) * low reverse transfer capacitance ( crss = typical 80 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability symbol absolute maximum ratings (t c =2 5,unless otherwise specified) parameter symbol patings unit drain-source voltage v dss 200 v gate-source voltage v gss 20 v t c =2 5 9 a drain currenet continuous t c =100 i d 6.3 a drain current pulsed i dp 8.0 a repetitive(note 2) e ar 9 mj avalanche energy single pulse(note 3) e as 150 mj peak diode recovery dv/dt(note 4) dv/dt 3.5 v/ns t c =2 5 88 w total power dissipation derate above 25 p d 51 w/ junction temperature t j +150 beijing estek electronics co.,ltd 1 ET630
ET630 storage temperature t stg -55~+150 note:1.absolute maximum ratings are those values beyond which the device could be permanently damaged absolute maximum ratings are stress ratings only and functional device operation is not implied 2.repetitive rating:pulse width limited bu maximum junction temperature thermal data parameter package symbol ratings unit to-220 80 thermal resistance junction-ambient to-220f ja 80 to-220 1.67 thermal resistance junction-case to-220f jc 2.45 /w electrical c haracteristics t j =2 5,unless otherwise specified. parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v,i d =250 a 200 v v ds =200v,v gs =0v 10 a zero gate voltage drain current i dss v ds =200v,t c =12 5 100 a forward v gs =20v,v ds =0v 100 na gate-body leakage current reverse i gss v gs = 20v,v ds =0v 100 na breakdown voltage temperature bv dss / t j i d =250 a 0.1 v/ on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250 a 2.0 4.0 v static drain-source on-resistance r ds(on) v ds =10v,i d =5a 0.25 0.4 dynamic characteristics input capacitance c iss 600 pf output capacitance c oss 250 pf reverse transfer capacitance c rss v ds =25v,v gs =0v,f=1mh z 80 pf electrical characteristics(cont.) parameter symbol test conditions min typ max unit switching characteristics turn-on delay time t d ( on ) 30 ns rise time t r 50 ns turn-off delay time t d ( off ) 50 ns fall time t f v dd =100v,i d =9a,r g =9.1 40 ns total gate charge q g 19 30 nc gate-source charge q gs 10 nc gate-drain charge q gd v ds =160v,v gs =10v,i d =9a 9 nc drain-source diode characteristics drain-source diode forward voltage v sd v gs =0v,i sd =9a 2 v continuous drain-source current i sd 9 a pulsed drain-source current i sm 36 a reverse recovery time t rr 450 ns reverse recovery charge q rr i sd =9a,di sd /dt=100a/ s 3 c note:1 . pulse test: pulse widt h300s,duty cycle2% 2.essentially independent of operating temperature3 beijing estek electronics co.,ltd 2
typical characteristics ET630 beijing estek electronics co.,ltd 3
typical characteristics (cont.) ET630 beijing estek electronics co.,ltd 4
ET630 beijing estek electronics co.,ltd 5
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